Tsmc Standard Cell Naming Convention Direct

| Code | Relative drive | |------|----------------| | X0.5 | Ultra-weak | | X1 | Unit drive | | X2 | 2× unit | | X4 | 4× unit | | X8 | 8× unit | | X16 | Max drive |

| Field | Example codes | |--------------|----------------------------------------| | Function | INV, NAND2, DFFR, AOI21 | | Drive | X0.5, X1, X2, X4, X8, X16 | | Vt | LVT, RVT, HVT, ULVT, ELVT | | Physical | _D, _P, _F, _CK, _ISO, _LS | | Track height | 6T, 7.5T, 9T (node dependent) | tsmc standard cell naming convention

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INVX4 drives four times stronger than INVX1 . 3.3 Threshold Voltage (Vt) TSMC offers multiple Vt options to trade leakage power vs. speed. | Code | Relative drive | |------|----------------| | X0